4.Radiation-Hardened16Mbit20Mbit-512K×3240bitLow-PowerSRAMEAS512K32-REAS512K40-R_副本

Product Applications

This product is primarily used in high-reliability data storage applications such as satellite and aerospace systems.

Main Features

  • Capacity: 16/20 Mbit, 512K × 32/40 bit
  • Maximum Access Time: 25 ns
  • Operating Voltage: 2.97V ~ 3.63V
  • Operating Mode: Asynchronous
  • Operating Temperature: -55℃ ~ 125℃
  • Storage Temperature: -65℃ ~ 150℃
  • Package Type: CSOP 64 (EAS 512K32-R), CSOP 84 (EAS 512K40-R)
  • ESD Rating: 2000V (HBM)

 

Radiation Hardness Specifications

  • Total Ionizing Dose (TID): ≥100 krad(Si)
  • Single Event Latch-up (SEL) Threshold: ≥75 MeV·cm²/mg
  • Soft Error Rate (SER) (90% W.C. GEO orbit): ≤1E-7 errors/bit·day

 

Feature Description

  • Three-state bidirectional data bus
  • CMOS standby power current not exceeding 70 mA
  • Maximum operating current less than 100 mA @ 40 MHz
  • Address transitions within 4 ns trigger only one read/write operation
  • The EAS 512K40 die can be configured to be functionally compatible with Aeroflex products

 

Radiation-Hardened 16 Mbit/20 Mbit (512K×32/40 bit) Low-Power SRAM

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