Product Applications

This product is primarily used in various high-speed memory systems operating in high-radiation environments.

Main Features

• Capacity: 64 Kbit, 8K × 8 bit
• Part Number：ZDRHP6664-R
• Maximum Access Time: 60 ns
• Operating Voltage: 4.5V ~ 5.5V
• Operating Mode: Synchronous
• Operating Temperature: -55℃ ~ 125℃
• Storage Temperature: -65℃ ~ 150℃
• Package Type: CDIP 28
• ESD Rating: 1000V (HBM)

Radiation Hardness Specifications

• Total Ionizing Dose (TID): ≥100 krad(Si)
• Single Event Latch-up (SEL) Threshold: ≥75 MeV·cm²/mg
• Memory Cell SEU Threshold: ≥75 MeV·cm²/mg
• Full Chip SEU Threshold: ≥37 MeV·cm²/mg

Feature Description

• Three-state bidirectional data bus
• Maximum CMOS static current less than 10 mA
• Maximum operating current less than 100 mA @ 13.3 MHz